top of page
SIMS Process
Applications of Depth Profiling SIMS (DSIMS)
-
Layer Composition
-
Dopant Diffusion Profiling
-
Dose Measurements
-
Impurity and Contamination assessment
-
Junction Depth
-
Ultra low DL (1E16 at/cc) of gaseous impurities (O, N, C and H)
-
Reverse Engineering
( Also see SRP Analysis )
Materials
-
Si , SiGe , SiC
-
PSG , BPSG , Oxides , Nitrides
-
GaAs, AlGaAS, InP, AlInP
-
GaN , InGaN, AlGaN , AlN, Diamond
500 eV -10 keV Cs or O primary beam emitting positively (+ve) and negatively (-ve) secondary ions and molecules
bottom of page