Spreading resistance profiling (SRP) is a technique for the  measurement of “resistivity” versus depth in Si semiconductors.The technique involves the preparation of a suitable bevel and then the measurement of resistivity across the bevel using  a pair of probes.

 

From this the carrier concentration of the electrically active dopants ( p-type  or n-type)  can be derived

 

Applications of Spreading Resistance Profiling (SRP)  

• Dopant  Profiling of  electrically active p-type and n-type species    

• Junction Depth evaluation

• Shallow or Deep Profiles 

•  Processed Wafers ( small pads ) or  Plain Wafers  

• High Dynamic Range and extremely low detection limits   

Limitations 

• Only works for Silicon

• Alternative techniques are SIMS Analysis or  ECV